2SD875 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Transistor
2SD875
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB767
Unit: mm
s ^Features
q Large collector power dissipation P_C.
q High collector to emitter voltage V_CEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : X
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
min
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
80
I_C = 100µA, I_B = 0
80
I_E = 10µA, I_C = 0
5
V_CE = 10V, I_C = 150mA^*2
130
V_CE = 5V, I_C = 500mA^*2
50
I_C = 300mA, I_B = 30mA^*2
I_C = 300mA, I_B = 30mA^*2
V_CB = 10V, I_E = –50mA^*2, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
R
h_FE1
Marking Symbol
130 ~ 220
XR
S
185 ~ 330
XS
typ max Unit
0.1
µA
V
V
V
330
100
0.2
0.4
V
0.85
1.2
V
120
MHz
11
pF
*2 _{Pulse measurement}
1