2SD814 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s ^Features
q High collector to emitter voltage V_CEO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD814
150
base voltage 2SD814A
V_CBO
185
V
Collector to 2SD814
150
emitter voltage 2SD814A
V_CEO
185
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
100
mA
Collector current
I_C
50
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : P^(2SD814)
L^(2SD814A)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 100V, I_E = 0
1
µA
Collector to emitter 2SD814
150
V_CEO
I_C = 100µA, I_B = 0
V
voltage
2SD814A
185
Emitter to base voltage
Forward current transfer ratio
V_EBO
h_FE*
I_E = 10µA, I_C = 0
V_CE = 5V, I_C = 10mA
5
V
90
330
Collector to emitter saturation voltage V_CE(sat)
I_C = 30mA, I_B = 3mA
1
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
150
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
2.3
pF
Noise voltage
V_CE = 10V, I_C = 1mA, G_V = 80dB
NV
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
h_FE
Marking ^2SD814
Symbol
2SD814A
Q
90 ~ 155
PQ
LQ
R
130 ~ 220
PR
LR
S
185 ~ 330
PS
LS
1