2SD662 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)

Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
s ^Features
q High collector to emitter voltage V_CEO.
q High transition frequency f_T.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD662
250
base voltage 2SD662B
V_CBO
400
V
Collector to 2SD662
200
emitter voltage 2SD662B
V_CEO
400
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
100
mA
Collector current
I_C
70
mA
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter 2SD662
voltage
2SD662B
I_CEO
V_CEO
V_CE = 100V, I_B = 0
I_C = 100µA, I_B = 0
2
µA
200
V
400
Emitter to base voltage
Forward current
2SD662
transfer ratio
2SD662B
V_EBO
h_FE*
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 5mA
5
V
30
220
30
150
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C = 50mA, I_B = 5mA
V_CB = 10V, I_E = –10mA, f = 200MHz
50
V_CB = 10V, I_E = 0, f = 1MHz
1.2
V
80
MHz
5
10
pF
*_{hFE Rank classification}
Rank
P
h_FE
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1