2SD661 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD661
35
base voltage 2SD661A
V_CBO
55
V
Collector to 2SD661
35
emitter voltage 2SD661A
V_CEO
55
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SD661
2SD661A
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
35
V
55
Collector to emitter 2SD661
35
voltage
2SD661A ^VCEO
I_C = 2mA, I_B = 0
55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
V_EBO
h_FE*
V_CE(sat)
f_T
Noise voltage
NV
I_E = 10µA, I_C = 0
7
V
V_CE = 10V, I_C = 2mA
210
650
I_C = 100mA, I_B = 10mA
1
V
V_CB = 10V, I_E = –2mA, f = 200MHz
200
MHz
V_CE = 10V, I_C = 1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
210 ~ 340
S
290 ~ 460
T
360 ~ 650
1