2SD638 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For medium-power general amplification)

Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification
Complementary to 2SB643 and 2SB644
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD638
30
base voltage 2SD639
V_CBO
60
V
Collector to 2SD638
25
V_CEO
V
emitter voltage 2SD639
50
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
R0.7
0.85
0.55±0.1
0.45±0.05
3
2
1
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SD638
2SD639
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
0.1
µA
1
µA
30
V
60
Collector to emitter 2SD638
25
V_CEO
I_C = 2mA, I_B = 0
V
voltage
2SD639
50
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
I_E = 10µA, I_C = 0
7
V
V_CE = 10V, I_C = 10mA
85
160 340
V_CE = 10V, I_C = 500mA^*2
40
90
I_C = 300mA, I_B = 30mA
0.35
0.6
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f = 1MHz
6
15
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
S
h_FE1
85 ~ 170 120 ~ 240 170 ~ 340
1