2SD637 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
I_CEO
V_CBO
V_CB = 20V, I_E = 0
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
1
µA
1
µA
60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 2mA
50
V
7
V
160
460
Collector to emitter saturation voltage V_CE(sat)
I_C = 100mA, I_B = 10mA
0.3
0.5
V
Transition frequency
f_T
V_CB = 10V, I_E = –2mA, f = 200MHz
150
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
3.5
pF
*_{hFE Rank classification}
Rank
Q
h_FE
160 ~ 260
R
210 ~ 340
S
290 ~ 460
1