2SD602 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB710 and 2SB710A
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD602
30
base voltage 2SD602A
V_CBO
60
V
Collector to 2SD602
25
V_CEO
V
emitter voltage 2SD602A
50
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
500
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : W^(2SD602)
X^(2SD602A)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base 2SD602
voltage
2SD602A
Collector to emitter 2SD602
voltage
2SD602A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
Conditions
min
V_CB = 20V, I_E = 0
30
I_C = 10µA, I_E = 0
60
25
I_C = 10mA, I_B = 0
50
I_E = 10µA, I_C = 0
5
V_CE = 10V, I_C = 150mA^*2
85
V_CE = 10V, I_C = 500mA^*2
40
I_C = 300mA, I_B = 30mA^*2
V_CB = 10V, I_E = –50mA^*2, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
h_FE1
Marking ^2SD602
Symbol
2SD602A
85 ~ 170
WQ
XQ
R
120 ~ 240
WR
XR
S
170 ~ 340
WS
XS
typ max Unit
0.1
µA
V
V
V
160 340
0.35
0.6
V
200
MHz
6
15
pF
*2 _{Pulse measurement}
1