2SD592 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB621 and 2SB621A
s ^Features
q Large collector power dissipation P_C.
q Low collector to emitter saturation voltage V_CE(sat).
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SD592
30
base voltage 2SD592A
V_CBO
60
V
Collector to 2SD592
25
V_CEO
V
emitter voltage 2SD592A
50
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Collector to base 2SD592
voltage
2SD592A
Symbol
I_CBO
V_CBO
Conditions
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
min
typ
max Unit
0.1
µA
30
V
60
Collector to emitter 2SD592
voltage
2SD592A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
25
I_C = 2mA, I_B = 0
V
50
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 500mA^*2
V_CE = 5V, I_C = 1A^*2
I_C = 500mA, I_B = 50mA^*2
I_C = 500mA, I_B = 50mA^*2
5
V
85
160 340
50
0.2
0.4
V
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f = 1MHz
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
S
h_FE1
85 ~ 170 120 ~ 240 170 ~ 340
1