2SD2693A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Power Transistors Silicon NPN triple diffusion planar type

Power Transistors
2SD2693A
Silicon NPN triple diffusion planar type
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio h_FE
• Low collector-emitter saturation voltage V_CE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
80
V
Collector-emitter voltage (Base open) V_CEO
80
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
3
A
Peak collector current ^*
I_CP
5
A
Collector power dissipation
P_C
25
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) *: Non-repetitive peak collector current
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open) ^*1 V_CEO
Collector-base cutoff current (Emitter open) I_CBO
Collector-emitter cutoff current (Base open) I_CEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^*1
I_EBO
h_FE1 ^*2
Collector-emitter saturation voltage ^*1
h_FE2
V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
Conditions
I_C = 30 mA, I_B = 0
V_CB = 80 V, I_E = 0
V_CE = 80 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4 V, I_C = 1 A
V_CE = 4 V, I_C = 3 A
I_C = 3 A, I_B = 0.375 A
V_CE = 10 V, I_C = 0.5 A, f = 10 MHz
I_C = 1 A, Resistance loaded
I_B1 = 0.1 A, I_B2 = − 0.1 A
V_CC = 50 V
Min Typ Max Unit
80
V
100 µA
100 µA
1
mA
70
250

10
0.8
V
30
MHz
0.1
µs
2.3
µs
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
Q
P
h_FE1
70 to 150
120 to 250
Publication date: July 2004
SJD00322AED
1