2SD2659 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Power Switching

Power Transistors
2SD2659
Silicon NPN triple diffusion planar type
For power switching
■ Features
• High forward current transfer ratio h_FE
• Satisfactory linearity of forward current transfer ratio h_FE
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
80
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
3
A
Peak collector current
I_CP
6
A
Collector power
T_C = 25°C P_C
20
W
dissipation
2
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
f_T
I_C = 10 mA, I_B = 0
V_CB = 80 V, I_E = 0
V_CE = 60 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4.0 V, I_C = 0.5 A
I_C = 2.0 A, I_B = 0.05 A
V_CE = 12 V, I_C = 0.2 A, f = 10 MHz
60
V
100 µA
100 µA
100 µA
500
1 500 
1.2
V
50
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00292AED
1