2SD2623 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For low-frequency amplification

Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Low ON resistance R_on
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
25
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
12
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2V
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
25
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
20
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
12
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^{*1, 2}
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
V_CB = 25 V, I_E = 0
V_CE = 2 V, I_C = 0.5 A
I_C = 0.5 A, I_B = 20 mA
I_C = 0.5 A, I_B = 50 mA
100 nA
200
800

0.14 0.40
V
1.2
V
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
200
Collector output capacitance
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
10
(Common base, input open circuited)
MHz
pF
ON resistanse ^*3
R_on
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
*3: ^Ron ^{Measuremet circuit}
Rank
R
S
T
1 kΩ
h_FE
200 to 350 300 to 500 400 to 800
IB = 1 mA
VB VV VA
f = 1 kHz
V = 0.3 V
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: February 2003
SJC00284BED
1