2SD2621 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type For low-frequency driver amplification

Transistors
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
■ Features
• High forward current transfer ratio h_FE
• Low collector-emitter saturation voltage V_CE(sat)
• High emitter-base voltage (Collector open) V_EBO
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
100
V
Collector-emitter voltage (Base open) V_CEO
100
V
Emitter-base voltage (Collector open) V_EBO
15
V
Collector current
I_C
20
mA
Peak collector current
I_CP
50
mA
Collector power dissipation
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
0.33^{+–00..0025}
3
Unit: mm
0.10^{+–00..0025}
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
Marking Symbol: 3B
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
100
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
100
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
15
Collector-base cutoff current (Emitter open) I_CBO V_CB = 60 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = 60 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 2 mA
400
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 1 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
Noise voltage
NV V_CE = 10 V, I_C = 1 mA, G_V = 80 dB
R_g = 100 kΩ, Function = FLAT
0.1
1.0
1 200
0.05 0.20
200
80
V
V
V
µA
µA

V
MHz
mV
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2004
SJC00307AED
1