2SD2575 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
10
V
Peak collector current
I_CP*1
9
A
Collector current
I_C
5
A
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
*1 _{Measuring time: t = 380µsec}
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
I_EBO
V_CEO
V_EBO
h_FE1
h_FE2
V_CE(sat)
f_T
C_ob
V_CB = 10V, I_E = 0
V_CE = 5V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 1mA, I_B = 0
10
I_E = 10µA, I_C = 0
10
V_CE = 2V, I_C = 0.5A^*
700
V_CE = 2V, I_C = 2A^*
195
I_C = 3A, I_B = 0.1A^*
V_CB = 6V, I_E = –50mA, f = 200MHz
V_CB = 20V, I_E = 0, f = 1MHz
typ max Unit
0.1
µA
1.0
µA
0.1
µA
V
V
0.28
0.5
V
170
MHz
45
65
pF
* _{Pulse measurement}
1