2SD2573 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
80
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
3
A
Peak collector current
I_CP
6
A
Collector power dissipation T_C = 25°C P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
7.5±0.2
Unit: mm
4.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage
Transition frequency
V_CEO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
f_T
I_C = 25 mA, I_B = 0
V_CB = 80 V, I_E = 0
V_CE = 40 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4 V, I_C = 0.5 A
I_C = 2 A, I_B = 0.05 A
V_CE = 12 V, I_C = 0.2 A, f = 10 MHz
60
V
100 µA
100 µA
100 µA
500
2 500 
1.0
V
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
h_FE
500 to 1 000 800 to 1 500 1 200 to 2 500
Publication date: September 2003
SJD00278BED
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