2SD2565 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For high voltage-withstand switching)

Transistor
2SD2565
Silicon NPN triple diffusion planer type
For high voltage-withstand switching
s ^Features
q High collector to base voltage V_CBO.
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
q Low collector to emitter saturation voltage V_CE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
400
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*1
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
*1 _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 100µA, I_E = 0
400
V
Collector to emitter voltage
V_CEO
I_C = 500µA, I_B = 0
400
V
Emitter to base voltage
V_EBO
I_E = 100µA, I_C = 0
5
V
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 30mA
30
–
Collector to emitter saturation voltage V_CE(sat)
I_C = 250mA, I_B = 50mA^*
1.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = 250mA, I_B = 50mA^*
1.5
V
Transition frequency
f_T
V_CB = 30V, I_E = –20mA, f = 200MHz
30
MHz
Collector output capacitance
C_ob
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = 30V, I_E = 0, f = 1MHz
I_C = 100mA
I_B1 = 10mA, I_B2 = –10mA
V_CC = 200V
6
20
pF
0.8
µS
3.7
µS
0.6
µS
* _{Pulse measurement}
1