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| 2SD2556 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For power switching) | |||
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Power Transistors
2SD2556
Silicon NPN epitaxial planer type
For power switching
I Features
⢠High forward current transfer ratio hFE
⢠Allowing supply with the radial taping
⢠Low collector to emitter saturation voltage VCE(sat): < 0.5 V
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Collector power TC = 25°C
PC
10
W
dissipation
Ta = 25°C
1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to +150
°C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
123
1: Base
2: Collector
3: Emitter
Internal Connection
B
U Type Package
C
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
50
µA
Collector to emitter voltage
VCEO
IC = 1 mA, IB = 0
80
V
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 * VCE = 2 V, IC = 2 A
90
260
Collector to emitter saturation voltage VCE(sat) IC = 4 A, IB = 0.2 A
0.5
V
Base to emitter saturation voltage
VBE(sat) IC = 4 A, IB = 0.2 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = â 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 2 A, IB1 = 0.2 A, IB2 = â 0.2 A
0.5
µs
Storage time
tstg
VCC = 50 V
1.5
µs
Fall time
tf
0.15
µs
Note) *: Rank classification
Rank
P
Q
hFE2
130 to 260 90 to 180
1
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