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2SD2544 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) | |||
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Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage VCEO
60
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
15
W
2
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.8A
VCE = 2V, IC = 2A
IC = 2A, IB = 50mA
IC = 2A, IB = 50mA
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 50mA, IB2 = â50mA,
VCC = 50V
min
typ
max Unit
10
µA
10
µA
60
V
500 1000 2000
60
0.5
V
1.5
V
70
MHz
0.5
µs
3.6
µs
1.1
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
500 to 1200 800 to 2000
1
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