2SD2538 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type Darlington(For power amplification)

Power Transistors
2SD2538
Silicon NPN triple diffusion planer type Darlington
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
• High forward current transfer ratio h_FE
• Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage
V_CEO
60
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
4
A
Collector current
I_C
2
A
Collector power ^TC ^{= 25°C}
P_C
35
W
dissipation
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Full Pack Package
Internal Connection
C
B
I Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2 ^*
V_CE(sat)
V_BE
f_T
t_on
t_stg
t_f
V_CB = 60 V, I_E = 0
V_CE = 30 V, I_B = 0
V_EB = 5 V, I_C = 0
I_C = 30 mA, I_B = 0
V_CE = 4 V, I_C = 1 A
V_CE = 4 V, I_C = 2 A
I_C = 2 A, I_B = 8 mA
V_CE = 4 V, I_C = 2 A
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
I_C = 2 A, I_B1 = 8 mA, I_B2 = −8 mA
V_CC = 50 V
Note) _*: Rank classification
Rank
P
Q
h_FE2
4 000 to 10 000 2 000 to 5 000
E
Min
60
1 000
2 000
Typ Max
1
2
2
10 000
2.5
2.8
20
0.5
4.0
1.0
Unit
mA
mA
mA
V
V
V
MHz
µs
µs
µs
1