2SD2530 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type Darlington(For power amplification)

Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
For power amplification
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
I Features
• High forward current transfer ratio h_FE
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage V_CE(sat): < 2.5 V
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
100
V
Collector to emitter voltage
V_CEO
100
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Collector power TC = 25°C
P_C
15
W
dissipation
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
1.2±0.1
1.48±0.2
0.65±0.1
0.35±0.1
2.5±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
123
C 1.0
2.25±0.2
0.55±0.1
1: Base
2: Collector
3: Emitter
MT-4 Package
Internal Connection
C
B
E
I Electrical Characteristics T_C = 25°C ± 2°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 100 V, I_E = 0
V_CE = 80 V, I_B = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 4 V, I_C = 2 A
V_CE = 4 V, I_C = 4 A
I_C = 2 A, I_B = 2 mA
I_C = 4 A, I_B = 16 mA
I_C = 4 A, I_B = 16 mA
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
I_C = 4 A, I_B1 = 16 mA, I_B2 = −16 mA
V_CC = 50 V
Min
100
2 000
500
Typ Max
100
100
5
15 000
1.5
2.5
2.5
20
0.27
2.9
1.0
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1