2SD2528 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
Unit: mm
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 _5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
I_EBO
V_CB = 80V, I_E = 0
V_EB = 6V, I_C = 0
100
µA
100
µA
Collector to emitter voltage
Forward current transfer ratio
V_CEO
h_FE*
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 1A
60
V
500
2000
Collector to emitter saturation voltage V_CE(sat)
I_C = 4A, I_B = 0.1A
0.3
V
Transition frequency
f_T
V_CE = 12V, I_C = 0.4A, f = 10MHz
30
MHz
Turn-on time
Storage time
Fall time
t_on
0.4
µs
t_stg
I_C = 4A, I_B1 = 0.08A, I_B2 = – 0.08A,
2.0
µs
V_CC = 50V
t_f
0.6
µs
*_{hFE Rank classification}
Rank
P
Q
h_FE
800 to 2000 500 to 1200
1