2SD2504 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Large collector current I_C
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
10
V
Emitter-base voltage (Collector open) V_EBO
10
V
Collector current
I_C
5
A
Peak collector current ^*
I_CP
9
A
Collector power dissipation
P_C
750
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: t = 380 µs
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45^{+–00..115}
2.5^{+–00..26}
2.5^{+–00..26}
0.45^{+–00..115}
1 23
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = 1 mA, I_E = 0
10
Collector-emitter voltage (Base open) V_CEO I_C = 10 µA, I_B = 0
10
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = 5 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 5 V, I_E = 0
Forward current transfer ratio ^*
h_FE1 V_CE = 2 V, I_C = 0.5 A
300
h_FE2 V_CE = 2 V, I_C = 2 A
195
Collector-emitter saturation voltage ^* V_CE(sat) I_C = 3 A, I_B = 0.1 A
Transition frequency
f_T
V_CB = 6 V, I_E = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 20 V, I_E = 0, f = 1 MHz
Typ Max
0.1
1.0
0.1
800
0.28 0.50
170
45 65
Unit
V
V
µA
µA
µA

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: February 2003
SJC00267DED
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