2SD2486 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s ^Features
q High forward current transfer ratio h_FE which has satisfactory
linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Base current
I_BP
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 60V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 2V, I_C = 0.8A
V_CE = 2V, I_C = 2A
I_C = 2A, I_B = 50mA
I_C = 2A, I_B = 50mA
V_CE = 10V, I_C = 0.5A, f = 10MHz
I_C = 2A, I_B1 = 50mA, I_B2 = –50mA,
V_CC = 50V
min
typ
max Unit
10
µA
10
µA
60
V
500 1000 2000
60
0.5
V
1.5
V
70
MHz
0.5
µs
3.6
µs
1.1
µs
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
500 to 1200 800 to 2000
1