2SD2479 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SD2479
Silicon NPN epitaxial planar type
For low-frequency amplification
7.5±0.2
Unit: mm
4.5±0.2
■ Features
• High forward current transfer ratio h_FE
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
120
V
Collector-emitter voltage (Base open) V_CEO
100
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
2
A
Peak collector current
I_CP
3
A
Collector power dissipation
P_C
1.5
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
≈ 200 Ω
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^{*1, 2}
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
Transition frequency
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
I_C = 100 µA, I_E = 0
I_C = 1 mA, I_B = 0
I_E = 100 µA, I_C = 0
V_CB = 25 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 10 V, I_C = 1 A
I_C = 1 A, I_B = 1 mA
I_C = 1 A, I_B = 1 mA
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
120
100
5
4 000
0.1
1
40 000
1.5
2
150
V
V
V
µA
µA

V
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
Q
R
S
h_FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
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