2SD2466 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-voltage switching)

Power Transistors
2SD2466, 2SD2466A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1604
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2466
40
base voltage 2SD2466A
V_CBO
50
V
Collector to 2SD2466
20
V_CEO
V
emitter voltage 2SD2466A
40
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
20
A
Collector current
I_C
10
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2466
current
2SD2466A
Emitter cutoff current
Collector to emitter 2SD2466
voltage
2SD2466A
I_CBO
I_EBO
V_CEO
V_CB = 40V, I_E = 0
V_CB = 50V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 3A
I_C = 10A, I_B = 0.33A
I_C = 10A, I_B = 0.33A
V_CE = 10V, I_C = 0.5A, f = 10MHz
V_CB = 10V, I_E = 0, f = 1MHz
I_C = 3A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 20V
min
typ
max Unit
50
µA
50
50
µA
20
V
40
45
90
260
0.6
V
1.5
V
120
MHz
200
pF
0.3
µs
0.4
µs
0.1
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1