2SD2459 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SD2459
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s ^Features
q High collector to emitter voltage V_CEO.
q Low collector to emitter saturation voltage V_CE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
150
V
Collector to emitter voltage V_CEO
150
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2E
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
*1_{hFE1 Rank classification}
V_CB = 75V, I_E = 0
0.1
µA
I_C = 10µA, I_E = 0
150
V
I_C = 1mA, I_B = 0
150
V
I_E = 10µA, I_C = 0
5
V
V_CE = 2V, I_C = 100mA
120
340
V_CE = 2V, I_C = 500mA
40
I_C = 500mA, I_B = 25mA^*2
0.11
0.3
V
I_C = 500mA, I_B = 25mA^*2
0.8
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
90
MHz
V_CB = 10V, I_E = 0, f = 1MHz
12
20
pF
*2 _{Pulse measurement}
Rank
R
S
h_FE1
Marking Symbol
120 ~ 240 170 ~ 340
2ER
2ES
1