2SD2457 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s ^Features
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
50
V
Collector to emitter voltage V_CEO
40
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
3
A
Collector current
I_C
1.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1Y
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
I_EBO
V_CBO
V_CEO
h_FE*1
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = 20V, I_E = 0
V_CE = 10V, I_B = 0
V_EB = 5V, I_E = 0
I_C = 1mA, I_E = 0
50
I_C = 2mA, I_B = 0
40
V_CE = 5V, I_C = 1A^*2
80
I_C = 1.5A, I_B = 0.15A^*2
I_C = 2A, I_B = 0.2A^*2
V_CB = 5V, I_E = –0.5A^*2, f = 200MHz
V_CB = 20V, I_E = 0, f = 1MHz
*1_{hFE Rank classification}
Rank
Q
R
h_FE
80 ~ 160 120 ~ 220
typ max Unit
1
µA
100
µA
10
µA
V
V
120 220
1
V
1.5
V
150
MHz
45
pF
*2 _{Pulse measurement}
1