2SD2453 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
■ Features
• High forward current transfer ratio h_FE
• Low collector-emitter saturation voltage V_CE(sat)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
80
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
2
A
Peak collector current ^*
I_CP
4
A
Base current
I_B
1
A
Collector power
T_C = 25°C P_C
10
W
dissipation
1
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
Note) Non-repetitive peak collector current
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO
Collector-base cutoff current (Emitter open) I_CBO
Collector-emitter cutoff current (Base open) I_CEO
Emiter-base cutoff current (Collector open) I_EBO
Forward current transfer ratio ^*
h_FE
Collector-emitter saturation voltage
V_CE(sat)
Transition frequency
f_T
I_C = 25 mA, I_B = 0
V_CB = 80 V, I_E = 0
V_CE = 40 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4 V, I_C = 0.5 A
I_C = 2 A, I_B = 0.05 A
V_CE = 12 V, I_C = 0.2 A, f = 10 MHz
60
V
100 µA
100 µA
100 µA
500
2 500 
1
V
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
S
h_FE
500 to 1 000 800 to 1 500 1 200 to 2 500
Publication date: September 2003
SJD00268AED
1