2SD2441 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SD2441
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s ^Features
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
4.5±0.1
1.6±0.2
45°
1.5±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
10
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
2
A
Collector current
I_C
1.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1V
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = 7V, I_E = 0
I_C = 10µA, I_E = 0
1
µA
10
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
V_CEO
V_EBO
h_FE
V_CE(sat)
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 1V, I_C = 400mA^*2
I_C = 1A, I_B = 25mA^*2
10
V
7
V
200
700
0.17 0.25
V
Transition frequency
f_T
V_CB = 60V, I_E = –50mA, f = 200MHz
190
MHz
Collector output capacitance
C_ob
Forward voltage
V_F*1
V_CB = 10V, I_E = 0, f = 1MHz
I_F = 500mA
50
pF
1.3
V
*1 _{Applicable to the built-in diode.}
*2 _{Pulse measurement}
1