2SD2420 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type Darlington(For power amplification)

Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
• High forward current transfer ratio h_FE: 2 000 to 10 000
• Dielectric breakdown voltage of the package: > 5 kV
φ 3.2±0.1
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage
V_CEO
60
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power ^TC ^{= 25°C}
P_C
40
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
Internal Connection
B
1: Base
2: Collector
3: Emitter
TO-220D Package
C
I Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage (DC value)
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2 ^*
V_BE
V_CE(sat)1
V_CE(sat)2
f_T
t_on
t_stg
t_f
V_CB = 60 V, I_E = 0
V_CE = 30 V, I_B = 0
V_EB = 5 V, I_C = 0
I_C = 30 mA, I_B = 0
V_CE = 3 V, I_C = 0.5 A
V_CE = 3 V, I_C = 3 A
V_CE = 3 V, I_C = 3 A
I_C = 3 A, I_B = 12 mA
I_C = 5 A, I_B = 20 mA
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
I_C = 3 A, I_B1 = 12 mA, I_B2 = −12 mA
V_CC = 50 V
Note) *: Rank classification
Rank
P
Q
h_FE2
4 000 to 10 000 2 000 to 5 000
E
Min
60
1 000
2 000
Typ Max
200
500
2
10 000
2.5
2.0
4.0
20
0.5
4.0
1.0
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1