2SD2416 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE.
q 60V zener diode built in between collector and base.
q Darlington connection.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60_–+1205
V
Collector to emitter voltage V_CEO
60_–+1205
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1T
Internal Connection
C
B
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I_CBO
I_EBO
V_CBO
V_CEO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Conditions
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
V_CE = 10V, I_C = 1.0A^*
I_C = 1.0A, I_B = 1.0mA^*
I_C = 1.0A, I_B = 1.0mA^*
V_CB = 10V, I_E = –50mA, f = 200MHz
min
50
50
6500
E
typ max Unit
1
µA
2
mA
85
V
85
V
40000
1.8
V
2.2
V
150
MHz
*2 _{Pulse measurement}
1