2SD2374AP Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548A
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
/ • High forward current transfer ratio hFE which has satisfactory lin-
earity
e _{• Low collector-emitter saturation voltage VCE(sat)}
. _{• Full-pack package which can be installed to the heat sink with one}
c _{tage screw}
n ^d _cle ^s _{■ Absolute Maximum Ratings Ta = 25°C}
a ^e lifecy ^Parameter
Symbol Rating
Unit
t _{Collector-base voltage (Emitter open) VCBO}
80
V
n ^{u duc Collector-emitter voltage (Base open) VCEO}
80
V
Pro ^{Emitter-base voltage (Collector open) V}EBO
6
V
te ^{tin ur Collectorcurrent}
I_C
3
A
g ^{fo e . Peak collector current}
I_CP
5
A
win ^{typ tion Collector power}
T_C = 25°C P_C
25
W
in ^{n follo nce e d a dissipation}
2.0
es tena ^{typ type form / Junction temperature}
a ^{o lud in ce d t in /en Storage temperature}
T_j
150
°C
T_stg −55 to +150 °C
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
M _isctinued ^{inlcaned maaintenancontinueed typeut latesic.co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C}
p ^m dis tinu ^{abo son Parameter}
Symbol
Conditions
iscon ^{ned con RL ana Collector-emitter voltage (Base open) VCEO}
/D ^{pla dis g U n.p Base-emitter voltage}
V_BE
e ^{in ico Collector-emitter cutoff current (E-B short) I}CES
D_{anc llow em Collector-emitter cutoff current (Base open) ICEO}
ten ^{fo .s Emitter-base cutoff current (Collector open) IEBO}
in isit ^ww _{Forward current transfer ratio}
h_FE1 ^*
Ma e ^{v ://w} _hFE2
leas ^{http Collector-emitter saturation voltage}
V_CE(sat)
P _{Transition frequency}
f_T
I_C = 30 mA, I_B = 0
V_CE = 4 V, I_C = 3 A
V_CE = 80 V, V_BE = 0
V_CE = 60 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4 V, I_C = 1 A
V_CE = 4 V, I_C = 3 A
I_C = 3 A, I_B = 0.375 A
V_CE = 10 V, I_C = 0.5 A, f = 10 MHz
Min Typ Max Unit
80
V
1.8
V
200 µA
300 µA
1
mA
70
250

10
1.2
V
30
MHz
Turn-on time
t_on
I_C = 1 A, I_B1 = 0.1 A, I_B2 = − 0.1 A
0.5
µs
Storage time
t_stg
V_CC = 50 V
2.5
µs
Fall time
t_f
0.4
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
70 to 150 120 to 250
Publication date: March 2004
SJD00261BED
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