2SD2374 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2374
60
V_CBO
V
base voltage 2SD2374A
80
Collector to 2SD2374
60
V_CEO
V
emitter voltage 2SD2374A
80
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
5
A
Collector current
I_C
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
3
A
25
W
2
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2374
current
2SD2374A
Emitter cutoff
2SD2374
current
2SD2374A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = 60V, V_BE = 0
V_CE = 80V, V_BE = 0
V_CE = 30V, I_B = 0
V_CE = 60V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 3A
V_CE = 4V, I_C = 3A
I_C = 3A, I_B = 0.375A
V_CE = 10V, I_C = 0.5A, f = 10MHz
I_C = 1A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
Unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 _5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min
typ
max Unit
200
µA
200
300
µA
300
1
mA
60
V
70
250
10
1.8
V
1.2
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
1