2SD2358 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistors
2SD2358
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1538
I Features
• Low collector to emitter saturation voltage V_CE(sat): < 0.15 V
• Allowing supply with the radial taping
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
10
V
Collector to emitter voltage
V_CEO
10
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.2
A
Collector current
I_C
1
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) *: Printed circuit board: Copper foil area of 1 cm² or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45−0.05
2.5±0.5 2.5±0.5
1
2
3
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+−00..105}
(HW Type)
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
C_ob
V_CB = 7 V, I_E = 0
I_C = 10 µA, I_E = 0
10
I_C = 1 mA, I_B = 0
10
I_E = 10 µA, I_C = 0
5
V_CE = 2 V, I_C = 100 mA
200
I_C = 500 mA, I_B = 20 mA
V_CB = 5 V, I_E = −50 mA, f = 200 MHz
V_CB = 20 V, I_E = 0, f = 1 MHz
1
800
0.15
120
30
µA
V
V
V
V
MHz
pF
1