2SD2357 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1537
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Large collector power dissipation P_C.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
10
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.2
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1M
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
C_ob
V_CB = 7V, I_E = 0
I_C = 10µA, I_E = 0
10
I_C = 1mA, I_B = 0
10
I_E = 10µA, I_C = 0
5
V_CE = 2V, I_C = 100mA^**
200
I_C = 500mA, I_B = 5mA
V_CB = 5V, I_E = –50mA, f = 200MHz
V_CB = 5V, I_E = 0, f = 1MHz
typ max Unit
1
µA
V
V
V
800
0.15
V
120
MHz
30
pF
** _{Pulse measurement}
1