2SD2266 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching)

Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
s ^Features
q High-speed switching
q Satisfactory linearity of foward current transfer ratio h_FE
q Allowing supply with the radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CB = 80V, I_E = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 4A
V_CE = 4V, I_C = 4A
I_C = 4A, I_B = 0.4A
V_CE = 12V, I_C = 0.2A, f = 10MHz
I_C = 4A, I_B1 = 0.4A, I_B2 = – 0.4A,
V_CC = 50V
min
typ
max Unit
100
µA
100
µA
60
V
70
320
20
2.0
V
1.5
V
80
MHz
0.3
µs
1.0
µs
0.2
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
O
160 to 320
1