2SD2259 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency amplification)

Transistor
2SD2259
Silicon NPN epitaxial planer type
For low-frequency amplification
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
20
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
15
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
0.7
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE
V_CE(sat)
f_T
C_ob
Conditions
V_CB = 15V, I_E = 0
V_CE = 15V, I_B = 0
I_C = 10µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 150mA^*
I_C = 500mA, I_B = 50mA^*
V_CB = 20V, I_E = –20mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
min
20
20
15
1000
typ max Unit
1
µA
10
µA
V
V
V
2500
0.15
0.4
V
55
MHz
10
15
pF
*2 _{Pulse measurement}
1