2SD2250 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1490
s ^Features
q Optimum for 80W HiFi output
q High foward current transfer ratio h_FE: 5000 to 30000
q Low collector to emitter saturation voltage V_CE(sat): <2.5V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
160
V
Collector to emitter voltage V_CEO
140
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
12
A
Collector current
I_C
7
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
90
W
3.5
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 160V, I_E = 0
V_CE = 140V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 5V, I_C = 1A
V_CE = 5V, I_C = 6A
I_C = 6A, I_B = 6mA
I_C = 6A, I_B = 6mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 6A, I_B1 = 6mA, I_B2 = –6mA,
V_CC = 50V
min
140
2000
5000
typ max Unit
100
µA
100
µA
100
µA
V
30000
2.5
V
3.0
V
20
MHz
2.5
µs
5.0
µs
2.5
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 5000 to 15000 8000 to 30000
1