2SD2242 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Allowing supply with the radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2242
60
V_CBO
V
base voltage 2SD2242A
80
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
Collector to 2SD2242
60
V_CEO
V
emitter voltage 2SD2242A
80
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
B
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2242
current
2SD2242A
Collector cutoff
2SD2242
current
2SD2242A
Emitter cutoff current
Collector to emitter 2SD2242
voltage
2SD2242A
Forward current transfer ratio
Base to emitter voltage
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_BE
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 3V, I_C = 0.5A
V_CE = 3V, I_C = 3A
V_CE = 3V, I_C = 3A
I_C = 3A, I_B = 12mA
I_C = 5A, I_B = 20mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 12mA, I_B2 = –12mA,
V_CC = 50V
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
min
60
80
1000
2000
E
typ max Unit
200
µA
200
500
µA
500
2
mA
V
10000
2.5
V
2
V
4
20
MHz
0.5
µs
4
µs
1
µs
1