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| 2SD2240 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type | |||
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Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2240
150
VCBO
V
base voltage 2SD2240A
185
Collector to 2SD2240
150
emitter voltage 2SD2240A
VCEO
185
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation PC
125
mW
Junction temperature
Tj
125
ËC
Storage temperature
Tstg
â55 ~ +125
ËC
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SCâ75
SSâMini Type Package
Marking symbol : P(2SD2240)
L(2SD2240A)
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter 2SD2240
voltage
2SD2240A
ICBO
VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE*
VCE(sat)
fT
Cob
Noise voltage
NV
VCB = 100V, IE = 0
1
µA
150
IC = 100µA, IB = 0
V
185
IE = 10µA, IC = 0
5
V
VCE = 5V, IC = 10mA
130
330
IC = 30mA, IB = 3mA
1
V
VCB = 10V, IE = â10mA, f = 200MHz
150
MHz
VCB = 10V, IE = 0, f = 1MHz
2.3
pF
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kâ¦, Function = FLAT
150
mV
*1hFE1 Rank classification
Rank
R
S
Marking
Symbol
hFE
2SD2240
2SD2240A
130 ~ 220
PR
LR
185 ~ 330
PS
LS
1
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