2SD2220 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification)

Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
s ^Features
q Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h_FE
q A shunt resistor is omitted from the driver
q Allowing supply with the radial taping
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
100
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation (T_C=25°C)
P_C
1.5
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
123
0.4±0.1
2.05±0.2
1:Emitter
2:Collector
3:Base
MT3 Type Package
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 1A
I_C = 1A, I_B = 1mA
I_C = 1A, I_B = 1mA
V_CB = 10V, I_E = –50mA, f = 200MHz
min
100
80
5
4000
typ max Unit
100
nA
100
nA
V
V
V
20000
1.8
V
2.2
V
150
MHz
*_{hFE Rank classification}
Rank
Q
R
h_FE
4000 to 10000 8000 to 20000
1