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2SD2216L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – For General Amplification
Transistors
2SD2216L
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462L
■ Features
• High forward current transfer ratio hFE
• Mold lead-less type package, allowing downsizing and thinning
of the equipment and automatic insertion through the tape packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
60
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation *
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
Note) *: Printed circuit board: Copper foil area of 20.0 mm2 or more, and
the board thickness of 1.6 mm for the collector portion
3
2
4
1
1.00±0.05
Unit: mm
0.020±0.010
0.60±0.05
0.30±0.03
4
1
3
Marking Symbol: L
0.60
2
0.05±0.03
1 : Base
2 : Emitter
3 : Collector
4 : Collector
ML4-N1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
60
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100 µA
Forward current transfer ratio
hFE1 VCE = 10 V, IC = 2 mA
180
390

hFE2 VCE = 2 V, IC = 100 mA
90
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.1 0.3
V
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00250BED
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