2SD2216J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE

Transistors
2SD2216J
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1462J
■ Features
• High forward current transfer ratio h_FE
• Low collector-emitter saturation voltage V_CE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
60
V
Collector-emitter voltage (Base open) V_CEO
50
V
Emitter-base voltage (Collector open) V_EBO
7
V
Collector current
I_C
100
mA
Peak collector current
I_CP
200
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +150 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
Marking Symbol: Y
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE1
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_E = 0
V_CE = 10 V, I_B = 0
V_CE = 10 V, I_C = 2 mA
60
V
50
V
7
V
0.1
µA
100 µA
180
390

h_FE2 V_CE = 2 V, I_C = 100 mA
90
Collector-emitter saturation voltage
V_CE(sat) I_C = 100 mA, I_B = 10 mA
0.1 0.3
V
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
3.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJC00249CED
1