2SD2216 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1462
s ^Features
q High foward current transfer ratio h_FE.
q Low collector to emitter saturation voltage V_CE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
50
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
200
mA
Collector current
I_C
100
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : Y
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CB = 20V, I_E = 0
V_CE = 10V, I_B = 0
I_C = 10µA, I_E = 0
I_C = 100µA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 2mA
V_CE = 2V, I_C = 100mA
0.1
µA
100
µA
60
V
50
V
7
V
160
460
90
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
I_C = 100mA, I_B = 10mA
V_CB = 10V, I_E = –2mA, f = 200MHz
0.1
0.3
V
150
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
3.5
pF
*_{hFE1 Rank classification}
Rank
Q
h_FE1
Marking Symbol
160 ~ 260
YQ
R
210 ~ 340
YR
S
290 ~ 460
YS
1