2SD2215 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
s ^Features
q High collector to base voltage V_CBO
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2215
350
V_CBO
V
base voltage 2SD2215A
400
Collector to 2SD2215
250
V_CEO
V
emitter voltage 2SD2215A
300
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
0.75
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Collector cutoff
current
2SD2215
I_CES
2SD2215A
Collector cutoff
current
2SD2215
2SD2215A ^ICEO
Emitter cutoff current
Collector to emitter 2SD2215
voltage
2SD2215A
I_EBO
V_CEO
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
Conditions
V_CE = 350V, V_BE = 0
V_CE = 400V, V_BE = 0
V_CE = 150V, I_B = 0
V_CE = 200V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 10V, I_C = 0.3A
V_CE = 10V, I_C = 1A
V_CE = 10V, I_C = 1A
I_C = 1A, I_B = 0.2A
V_CE = 5V, I_C = 0.5A, f = 10MHz
I_C = 1A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
3.0±0.2
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max Unit
1
mA
1
1
mA
1
1
mA
250
V
300
70
250
10
1.5
V
1
V
30
MHz
0.5
µs
2
µs
0.5
µs
1