2SD2210 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage output amplification)

Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Low ON resistance R_on.
q High foward current transfer ratio h_FE.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
25
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
12
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : IK
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = 25V, I_E = 0
I_C = 10µA, I_E = 0
1
µA
25
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE1*1
h_FE2
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 2V, I_C = 0.5A^*2
V_CE = 2V, I_C = 1A^*2
20
V
12
V
200
800
60
Collector to emitter saturation voltage V_CE(sat)
I_C = 0.5A, I_B = 20mA
0.13
0.4
V
Base to emitter saturation voltage V_BE(sat)
Transition frequency
f_T
I_C = 0.5A, I_B = 50mA
V_CB = 10V, I_E = –50mA, f = 200MHz
1.2
V
200
MHz
Collector output capacitance
ON resistanse
C_ob
R_on*3
V_CB = 10V, I_E = 0, f= 1MHz
10
pF
1.0
Ω
*1_{hFE1 Rank classification}
Rank
R
h_FE1
Marking Symbol
200 ~ 350
IKR
S
300 ~ 500
IKS
T
400 ~ 800
IKT
*2 _{Pulse measurement}
*3_Ron
Measurement
circuit
1kΩ
I_B=1mA
V_{B VV} V_A
f=1kHz
V=0.3V
R_on=
V_B
V_A–V_B
!1000(Ω)
1