2SD2177A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SD2177A
Silicon NPN epitaxial planer type
For low-frequency output amplification
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
60
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
5
V
Collector current
I_C
2
A
Peak collector current
I_CP
3
A
Collector power dissipation P_C*1
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
*1 _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
60
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
V_CEO
V_EBO
h_FE1*1
h_FE2*1
V_CE(sat)
V_BE(sat)
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 2V, I_C = 200mA
V_CE = 2V, I_C = 1A^*2
I_C = 1A, I_B = 50mA^*2
I_C = 1A, I_B = 50mA^*2
60
V
5
V
120
340
80
0.15
0.3
V
0.85
1.2
V
Transition frequency
f_T
V_CB = 10V, I_E = –50mA, f = 200MHz
110
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
23
35
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
R
S
h_FE1
120 ~ 240 170 ~ 340
1