2SD2139 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
Unit: mm
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q Allowing supply with the radial taping
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
60
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
15
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 _{1 2 3}
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_CEO
I_EBO
V_CEO
h_FE*
V_CE(sat)
f_T
V_CB = 80V, I_E = 0
V_CE = 40V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.5A
I_C = 2A, I_B = 0.05A
V_CE = 12V, I_C = 0.2A, f = 10MHz
min
typ
max Unit
100
µA
100
µA
100
µA
60
V
500
2500
1
V
50
MHz
*_{hFE Rank classification}
Rank
Q
P
O
h_FE
500 to 1000 800 to 1500 1200 to 2500
1