2SD2067 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SD2067 (Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s ^Features
q Darlington connection.
q High foward current transfer ratio h_FE.
q Large peak collector current I_CP.
q High collector to emitter voltage V_CEO.
q Allowing supply with the radial taping.
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
100
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
3
A
Collector current
I_C
2
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
Internal Connection
B
(HW type)
C
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE*1
V_CE(sat)
V_BE(sat)
Conditions
V_CB = 25V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 1A^*2
I_C = 1A, I_B = 1mA^*2
I_C = 1A, I_B = 1mA^*2
*1_{hFE Rank classification}
Rank
Q
R
S
h_FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
E
≈200Ω
min
120
100
5
4000
typ max Unit
0.1
µA
1
µA
V
V
V
40000
1.5
V
2
V
*2 _{Pulse measurement}
1