2SD2064 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high power amplification)

Power Transistors
2SD2064
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1371
s ^Features
q Satisfactory foward current transfer ratio h_FE vs. collector cur-
rent I_C characteristics
q Wide area of safe operation (ASO)
q High transition frequency f_T
q Optimum for the output stage of a HiFi audio amplifier
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
120
V
Collector to emitter voltage V_CEO
120
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
10
A
Collector current
I_C
6
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
70
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
h_FE1
h_FE2*
h_FE3
V_BE
V_CE(sat)
f_T
C_ob
V_CB = 120V, I_E = 0
V_EB = 3V, I_C = 0
V_CE = 5V, I_C = 20mA
V_CE = 5V, I_C = 1A
V_CE = 5V, I_C = 4A
V_CE = 5V, I_C = 4A
I_C = 4A, I_B = 0.4A
V_CE = 5V, I_C = 0.5A, f = 1MHz
V_CB = 10V, I_E = 0, f = 1MHz
*_{hFE2 Rank classification}
Rank
Q
S
h_FE2
60 to 120 80 to 160
P
100 to 200
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min
typ
max Unit
50
µA
50
µA
20
60
200
20
1.8
V
2.0
V
20
MHz
80
pF
1