2SD2057 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type For horizontal deflection output

Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s ^Features
q Incorporating a built-in damper diode
q Reduction of a parts count and simplification of a circuit are al-
lowed
q High breakdown voltage with high reliability
q High-speed switching
q Wide area of safe operation (ASO)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1500
V
Collector to emitter voltage V_CES
1500
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
20
A
Collector current
I_C
5
A
Base current
I_B
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
100
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.0±0.3
11.0±0.2
5.0±0.2
3.2
φ3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
I_CBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
V_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
V_F
V_CB = 1000V, I_E = 0
V_CB = 1500V, I_E = 0
I_E = 500mA, I_C = 0
V_CE = 10V, I_C = 5A
I_C = 5A, I_B = 1.2A
I_C = 5A, I_B = 1.2A
V_CE = 10V, I_C = 1A, f = 0.5MHz
I_C = 5A, I_B1 = 1.2A, I_B2 = –1.2A,
L_leak = 5µH
I_C = –6A, I_B = 0
min
typ
max Unit
30
µA
300
µA
7
V
4.5
15
8
V
1.5
V
2
MHz
12
µs
0.8
µs
–2.3
V
1